Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A)

SMPS MOSFET Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：104.54 Kbytes 页数：8 Pages

IRF

100V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 经过充分验证的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 经过充分验证的的电容，包括有效的Coss以简化设计;

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英飞凌

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：279.19 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Description These HEXFET® Power MOSFETs in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive ava

文件：204.72 Kbytes 页数：8 Pages

IRF

HIGH FREQUENCY DC-DC CONVERTERS

文件：284.49 Kbytes 页数：8 Pages

IRF

HIGH FREQUENCY DC-DC CONVERTERS

文件：284.49 Kbytes 页数：8 Pages

IRF

HEXFETPower MOSFET

文件：189.06 Kbytes 页数：8 Pages

IRF

HIGH FREQUENCY DC-DC CONVERTERS

文件：284.49 Kbytes 页数：8 Pages

IRF

HIGH FREQUENCY DC-DC CONVERTERS

文件：284.49 Kbytes 页数：8 Pages

IRF

HEXFETPower MOSFET

Infineon

英飞凌