HEXFET Power MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Netwo

文件：210.69 Kbytes 页数：10 Pages

IRF

丝印：IRF7413；Package：SOP-8；30V N-Channel MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

文件：618.51 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Control FET for Notebook Processor Power

文件：272.06 Kbytes 页数：10 Pages

IRF

Control FET for Notebook Processor Power

文件：272.06 Kbytes 页数：10 Pages

IRF

Control FET for Notebool Processor Power, Control and Synchronous Rectifier

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG ● Lead-Free Applications ● Control FET for Notebook Processor Power ● Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computi

文件：266.83 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：219.63 Kbytes 页数：10 Pages

IRF

Control FET for Notebook Processor Power

文件：292.06 Kbytes 页数：10 Pages

IRF

Control FET for Notebook Processor Power

文件：289.79 Kbytes 页数：10 Pages

IRF

Control FET for Notebook Processor Power

文件：289.79 Kbytes 页数：10 Pages

IRF

Control FET for Notebook Processor Power

文件：272.06 Kbytes 页数：10 Pages

IRF