HEXFET Power MOSFET

Description These P-Channel HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicat

文件：102.49 Kbytes 页数：9 Pages

IRF

-12V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 符合行业标准的引脚\n• P 通道MOSFET;

Infineon

英飞凌

HEXFET짰Power MOSFET

Description These P-Channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management appl

文件：153.08 Kbytes 页数：9 Pages

IRF

丝印：F7410；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES V(BR)DSS -20V RDS(ON) 8.5mΩ ID -14A

文件：3.06011 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Ultra Low On-Resistance

文件：214.53 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

文件：214.53 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

文件：216.45 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

文件：216.45 Kbytes 页数：9 Pages

IRF

Industry-standard pinout SO-8 Package

文件：200.73 Kbytes 页数：10 Pages

IRF

Industry-standard pinout SO-8 Package

文件：200.73 Kbytes 页数：10 Pages

IRF