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IRF7314

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:147.52 Kbytes 页数:7 Pages

IRF

IRF7314Q

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°

文件:149.71 Kbytes 页数:9 Pages

IRF

IRF7316

HEXFET POWER MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:237.94 Kbytes 页数:7 Pages

IRF

IRF7316

Dual P-Channel MOSFET

Features Vs (v)=-30V Rpson)

文件:364.15 Kbytes 页数:7 Pages

EVVOSEMI

翊欧

IRF7316

丝印:F7316;Package:SOP-8;-30V PP-Channel Enhancement Mode MOSFET

GENERAL FEATURES ● VDS = -30V b = -8 A ● ROS(ON)

文件:3.06247 Mbytes 页数:5 Pages

TECHPUBLIC

台舟电子

IRF7316TRPBF

-30V PP-Channel Enhancement Mode MOSFET

GENERAL FEATURES ● VDS = -30V b = -8 A ● ROS(ON)

文件:3.06247 Mbytes 页数:5 Pages

TECHPUBLIC

台舟电子

IRF7317

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件:156.86 Kbytes 页数:10 Pages

IRF

IRF7317TRPBF

N-Channel and P-Channel Enhancement Mode Power MOSFET

Features • N-Channel: 30V, 10A RDS(ON)

文件:1.11085 Mbytes 页数:8 Pages

Bychip

百域芯

IRF7319

Dual N P Channel MOSFET

Features N-Ch: Vos (v)=30V Rosoy(on)

文件:402.24 Kbytes 页数:10 Pages

EVVOSEMI

翊欧

IRF7319

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:137.16 Kbytes 页数:10 Pages

IRF

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    2000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    30V

  • Maximum Continuous Drain Current:

    4.7A

  • Material:

    Si

  • Configuration:

    Single Dual Drain

  • Channel Type:

    P

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
SMG
05+
原厂原装
53
只做全新原装真实现货供应
询价
哈里斯
23+
TO-220
50000
全新原装正品现货,支持订货
询价
哈里斯
23+
TO-220
50000
全新原装正品现货,支持订货
询价
哈里斯
21+
TO-220
10000
原装现货假一罚十
询价
IR/FSC
22+
D2-PAK
6000
十年配单,只做原装
询价
IR/FSC
23+
D2-PAK
6000
原装正品,支持实单
询价
IR
23+
66504
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
IR
2023+
3000
进口原装现货
询价
SEC
25+
TO-220
880000
明嘉莱只做原装正品现货
询价
哈里斯
24+
NA/
114
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多IRF731供应商 更新时间2025-10-4 10:31:00