HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

文件：162.21 Kbytes 页数：8 Pages

IRF

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

UMW

友台半导体

Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

文件：2.3004 Mbytes 页数：11 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

文件：2.09404 Mbytes 页数：11 Pages

IRF

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

文件：2.3004 Mbytes 页数：11 Pages

EVVOSEMI

翊欧

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

UMW

友台半导体

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.44944 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

SMPS MOSFET

SMPS MOSFET Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptable Power Supply ● High speed power switching Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and

文件：102.73 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified (See AN1001) • Lead (Pb)-free Available APPLICATIONS • Swi

文件：167.91 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe

文件：166.34 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司