N-Channel MOSFET

■ Features ● VDS (V) =400V ● ID = 5.5 A (VGS = 10V) ● RDS(ON)

文件：1.42874 Mbytes 页数：5 Pages

KEXIN

科信电子

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet

文件：192.81 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

DESCRIPTION Third Generation MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It p

文件：893.24 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：277.08 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

GENERATION V TECHNOLOGY

文件：243.16 Kbytes 页数：9 Pages

IRF

Generation V Technology

文件：780.11 Kbytes 页数：9 Pages

KERSEMI

GENERATION V TECHNOLOGY

文件：236.1 Kbytes 页数：9 Pages

IRF

GENERATION V TECHNOLOGY

文件：236.1 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

文件：247.81 Kbytes 页数：9 Pages

IRF

HEXFETPOWERMOSET

文件：244.54 Kbytes 页数：9 Pages

IRF