N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=5.5A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω (Max) • Fast Switching Speed APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power s

文件：201.45 Kbytes 页数：2 Pages

ISC

无锡固电

D Series Power MOSFET

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

文件：173.28 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

6.0A, 400V, 1.0廓 N-CHANNEL POWER MOSFET

DESCRIPTION ➤ IRF730 is 400V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ➤ Advanced termination scheme to provide enhanced voltage-blocking capability; ➤ Avalanche Energy Specified; ➤ Source-to-Drain Diode Recov

文件：365.66 Kbytes 页数：6 Pages

FS

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=3.5A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Fast Switching Speed APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power su

文件：65.269 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：134.68 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：156.83 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：156.83 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

文件：173.99 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet

文件：192.81 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

DESCRIPTION Third Generation MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It p

文件：262.3 Kbytes 页数：6 Pages

IRF