400V N-Channel MOSFET

ONSEMI

安森美半导体

MOSFET/场效应管

BlueRocket

蓝箭电子

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：156.83 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：113.75 Kbytes 页数：9 Pages

IRF

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa

文件：409.28 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：237.6 Kbytes 页数：9 Pages

IRF

丝印：IRF7301；Package：SOP-8；Generation V Technology

Features VDS (V) = 20V RDS(ON)

文件：461.64 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：IRF7301；Package：SOP-8；MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa

文件：409.28 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：1.08868 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

文件：446.3 Kbytes 页数：8 Pages

UMW

友台半导体