N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 28A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 77mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Automatic Test Equipment · High-Side Switching

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无锡固电

丝印：D2PAK；Package：TO-263；N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

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VBSEMI

微碧半导体

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

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VishayVishay Siliconix

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

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VishayVishay Siliconix

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HEXFET짰 Power MOSFET

DESCRIPTION Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provid

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IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

文件：176.15 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

文件：176.15 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

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IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.0265Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera

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无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

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ISC

无锡固电