IRF540A

Advanced Power MOSFET

Features ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175OperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

IRF540D

N -Channel Power MOSFET (100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

IRF540F

N -Channel Power MOSFET (100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

IRF540FI

N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET

N-CHANNEL100V-00.50Ω-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA

IRF540FI

isc N-Channel Mosfet Transistor

DESCRITION Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

IRF540I

N -Channel Power MOSFET (100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

IRF540N

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Features 1.UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V 2.SimulationModels -TemperatureCompensatedPSPICE™andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels 3.PeakCurrentvsPulseWidthCurve 4.UISRatingCurve

IRF540N

Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF540N

N-Channel Mosfet Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.044Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperat

IRF540N

Advanced Process Technology

VDSS=100V RDS(on)=44mΩ ID=33A Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethrougho