TO-220-3L Plastic-Encapsulate MOSFETS

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available

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DGNJDZ

南晶电子

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：6.94774 Mbytes 页数：7 Pages

KERSEMI

N -Channel Power MOSFET (100V/27A)

GENERAL DESCRIPTION It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for high current load applications. FEATURE ● High current rating ● Ultra lower RDS(on) ● Good stability and uniformity with high EAS ● Excellent pack

文件：1.1052 Mbytes 页数：4 Pages

FS

N-Channel Power MOSFET

ID (A) 28 VDSS (V) 100 RDS(ON) (Ω) 0.077 @ VGS = 10V QG(nC) max. 72 DESCRIPTION The Nell IRF540 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of op

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NELLSEMI

尼尔半导体

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=30A,RDS(ON)≤70mΩ @VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced hig

文件：1.15286 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-CHANNEL 100V - 0.055 W - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom an

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SYC

N-CHANNEL 100V - 0.055廓 - 22A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET

文件：311.12 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

SEMICONDUCTORS

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etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Power MOSFET

文件：282.81 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

HEXFET POWER MOSFET

Infineon

英飞凌