N -Channel Power MOSFET (100V/27A)

GENERAL DESCRIPTION It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for high current load applications. FEATURE ● High current rating ● Ultra lower RDS(on) ● Good stability and uniformity with high EAS ● Excellent pack

文件：1.15947 Mbytes 页数：4 Pages

FS

MOS FET:Low Voltage

First Silicon

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Features 1. Ultra Low On-Resistance -rDS(ON)= 0.040Ω,VGS=10V 2. Simulation Models - Temperature Compensated PSPICE™ and SABER©Electrical Models - Spice and SABER©Thermal Impedance Models 3. Peak Current vs Pulse Width Curve 4. UIS Rating Curve

文件：126.21 Kbytes 页数：10 Pages

Intersil

Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：99.87 Kbytes 页数：8 Pages

IRF

N-Channel Mosfet Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.044Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operat

文件：237.2 Kbytes 页数：2 Pages

ISC

无锡固电