Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件：135.35 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Material categorization: for definitions of compliance

文件：212.59 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Material categorization: for definitions of compliance

文件：212.59 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：200.52 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：129.08 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：150.34 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：129.08 Kbytes 页数：10 Pages

IRF

Power MOSFET

文件：282 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世

isc N-Channel MOSFET Transistor

文件：280.41 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：294.54 Kbytes 页数：2 Pages

ISC

无锡固电