N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPE

文件：181.76 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

文件：221.11 Kbytes 页数：8 Pages

SYC

N-Channel Power Mosfets,

文件：338.75 Kbytes 页数：5 Pages

ARTSCHIP

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Power MOSFET

文件：282 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• 175 °C operating temperature;

Vishay

威世科技

9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET

Renesas

瑞萨

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs

Microchip

微芯科技

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

文件：158.55 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.155Ω (Typ.)

文件：243.94 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司