IRF520

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

APPLICATIONS nHIGHCURRENT,HIGHSPEEDSWITCHING nSOLENOIDANDRELAYDRIVERS nREGULATORS nDC-DC&DC-ACCONVERTERS nMOTORCONTROL,AUDIOAMPLIFIERS nAUTOMOTIVEENVIRONMENT(INJECTION, ABS,AIR-BAG,LAMPDRIVERS,Etc.)

IRF520

Power MOSFET

IRF520

SEMICONDUCTORS

IRF520

N-Channel Power Mosfets,

IRF520_V01

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

IRF520A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

IRF520FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE

IRF520FI

isc N-Channel MOSFET Transistor

•DESCRITION •HighCurrent,HighSpeedSwitching •DC-DC&DC-ACConverters •MotorControl,AudioAmplifiers •FEATURES •TypicalRDS(on)=0.23Ω •AvalancheRuggedTechnology •HighCurrentCapability •LowGateCharge •175℃OperatingTemperature

IRF520L

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF520N

Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide