IRF520_V01

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

IRL520_V01

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

LNK520_V01

EnergyEfficient,CVorCV/CCSwitcherforVeryLowCostChargersandAdapters

CostEffectiveLinear/RCCReplacement •Lowestcostandcomponentcount,constantvoltage(CV) orconstantvoltage/constantcurrent(CV/CC)solutions •Optimizedforbiaswindingfeedback •Upto75lighterpowersupplyreducesshippingcost •PrimarybasedCV/CCsolutioneliminates10to20

MBR520_V01

SCHOTTKYBARRIERRECTIFIER

FEATURES Metal-semiconductorjunctionwithguardring Epitaxialconstruction Lowforwardvoltagedrop,lowswitchinglosses Highsurgecapability Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications TheplasticmaterialcarriesU/Lrecognition94

SB520_V01

SCHOTTKYBARRIERRECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 260C/10seconds,0.375”(9.5mm)leadl

SB520_V01

SchottkyBarrierRectifiers

SB520_V01

SchottkyBarrierRectifier

FEATURES •Guardringforovervoltageprotection •Extremelyfastswitching •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin accordancetoWEEE2002/96/EC

SB520_V01

SCHOTTKYBARRIERRECTIFIER

FEATURES Metal-semiconductorjunctionwithguardring Epitaxialconstruction Lowforwardvoltagedrop,lowswitchinglosses Highsurgecapability Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications TheplasticmaterialcarriesU/Lrecognition94

SB520_V01

5.0ASCHOTTKYBARRIERDIODE

SchottkyBarrierChip GuardRingforTransientandESDProtection SurgeOverloadRatingto150APeak LowPowerLoss,HighEfficiency IdeallySuitedforUseinHighFrequency SMPS,InvertersandAsFreeWheelingDiodes

SIHL520_V01

PowerMOSFET

FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •Logic-LevelGateDrive •RDS(on)SpecifiedatVGS=4Vand5V •175°COperatingTemperature •FastSwitching •EaseofParalleling •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfrom