HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：939.9 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：303.57 Kbytes 页数：12 Pages

IRF

N-Channel MOSFET Transistor

文件：338.76 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes 页数：12 Pages

KERSEMI