HEXFET Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

文件：2.74862 Mbytes 页数：11 Pages

IRF

15 V low VCEsat PNP double transistor

DESCRIPTION PNP low VCEsat double transistor in a SOT666 plastic package. NPN complement: PBSS2515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage •

文件：68.56 Kbytes 页数：12 Pages

PHI

PHI

900 MHz analog cordless telephone IC

文件：180.01 Kbytes 页数：44 Pages

PHI

PHI

900 MHz analog cordless telephone IC

文件：180.01 Kbytes 页数：44 Pages

PHI

PHI