N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low Input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件：208.64 Kbytes 页数：5 Pages

Samsung

三星

isc N-Channel MOSFET Transistor

DESCRIPTION • VGS Rated at ±20V • Silicon Gate for Fast Switching Speeds • IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature • Rugged APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor cont

文件：49.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：848.7 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3

NJS

N-Channel MOSFET Transistor

• DESCRITION • Combine with the fast switching speed and ruggedized device design • FEATURES • Static drain-source on-resistance: RDS(on) ≤70mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

文件：338.67 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：124.98 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：197.25 Kbytes 页数：10 Pages

IRF

Isc N-Channel MOSFET Transistor

• FEATURES • With To-262 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：300.35 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：386.58 Kbytes 页数：10 Pages

IRF