Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

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HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：176.66 Kbytes 页数：8 Pages

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Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

文件：92.66 Kbytes 页数：8 Pages

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N-Ch 60V Fast Switching MOSFETs

Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

文件：505.03 Kbytes 页数：4 Pages

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Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

文件：160.74 Kbytes 页数：10 Pages

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HEXFET짰 Power MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

文件：277.34 Kbytes 页数：10 Pages

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HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：939.9 Kbytes 页数：8 Pages

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AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

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AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：303.57 Kbytes 页数：12 Pages

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AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：370.99 Kbytes 页数：13 Pages

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