首页>IRF3205SPBF>规格书详情
IRF3205SPBF中文资料IRF数据手册PDF规格书
IRF3205SPBF规格书详情
VDSS= 55V
RDS(on)= 8.0mΩ
ID= 110A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号:
IRF3205SPBF
- 功能描述:
MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ir |
24+ |
500000 |
行业低价,代理渠道 |
询价 | |||
INFINEON/英飞凌 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
询价 | ||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
24+ |
NA/ |
16383 |
原装现货,当天可交货,原型号开票 |
询价 | ||
TO252 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
IR |
25+ |
TO263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 |