Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

文件：92.66 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

文件：160.74 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

文件：609.74 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：1.09156 Mbytes 页数：10 Pages

KERSEMI