首页 >IPD09N03LAGMOS(场效应管)>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
OptiMOS짰2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS짰2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS짰2Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS짰2Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS짰2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS짰2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS짰2Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
TO-252 |
15000 |
只做原装支持实单需要联系Q:235 |
询价 | |||
INFINEON/英飞凌 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-252 |
90 |
原装现货假一赔十 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO252-3 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
INFINEON/英飞凌 |
252 |
09 |
84 |
询价 | |||
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
INFINEON |
23+ |
7000 |
询价 | ||||
INFINEON/英飞凌 |
23+ |
TO252-2.5 |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
询价 | ||
INFINEON |
2017+ |
SOT-252 |
30000 |
原装正品,诚信经营 |
询价 | ||
INFINEON |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
询价 |
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