GAN

型号：AP2128K-1.5TRG1；Package：SOT-23-5；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features ·WideOperatingVoltage:2.5Vto6V ·LowDropoutVoltage:170mV@300mAfor VOUT=3.3V,140mV@300mAforVOUT=5.2V ·HighOutputVoltageAccuracy:±2 ·HighRippleRejection: 68dB@f=1kHz,54dB@f=10kHz ·LowStandbyCurrent:0.1μA ·LowQuiescentCurrent:60μATypical ·LowOutput

GAN

型号：ISL62872HRUZ-T；Package：20Ld3.2x1.8μTQFN；PWM DC/DC Controller With VID Inputs For Portable GPU Core-Voltage Regulator

GAN041

型号：GAN041-650WSB；Package：SOT429；650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

1.Generaldescription TheGAN041-650WSBisa650V,35mΩGalliumNitride(GaN)FETinaTO-247package.Itisa normally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMTH2technologyand low-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance.

GAN063-650WSA

型号：GAN063-650WSA；Package：SOT429；650 V, 50 mΩ Gallium Nitride (GaN) FET

1.Generaldescription TheGAN063-650WSAisa650V,50mΩGalliumNitride(GaN)FET.Itisanormally-offdevicethat combinesNexperia’sstate-of-the-arthigh-voltageGaNHEMTandlow-voltagesiliconMOSFET technologies—offeringsuperiorreliabilityandperformance. 2.Featuresandbenefit

GAN111

型号：GAN111-650WSB；Package：TO-247-3L；650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package

1.Generaldescription TheGAN111-650WSBisa650V,97mΩGalliumNitride(GaN)FETinaTO-247package.Itisa normally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMTH2technologyand low-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance.