| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs Features •Highvoltagerailupto1200V •Drivercurrentcapability:2A/3Asource/sink@25°C,VH=6V •dV/dttransientimmunity±100V/ns •Input-outputpropagationdelay:45ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •UVLOfunctionoptimizedforGaN | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs Features •Highvoltagerailupto1200V •Drivercurrentcapability:2A/3Asource/sink@25°C,VH=6V •dV/dttransientimmunity±100V/ns •Input-outputpropagationdelay:45ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •UVLOfunctionoptimizedforGaN | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs Features •Highvoltagerailupto1700V •Drivercurrentcapability:2A/3Asource/sink@25°C,VH=6V •dV/dttransientimmunity±100V/ns •Input-outputpropagationdelay:45ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •UVLOfunctionoptimizedforGaN | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs Features •Highvoltagerailupto1700V •Drivercurrentcapability:2A/3Asource/sink@25°C,VH=6V •dV/dttransientimmunity±100V/ns •Input-outputpropagationdelay:45ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •UVLOfunctionoptimizedforGaN | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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