丝印：GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features • High voltage rail up to 1700 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN

文件：556.07 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features • High voltage rail up to 1700 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN

文件：556.07 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体