丝印：GAN041；Package：SOT429；650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

1. General description The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

文件：315.84 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：GAN041；Package：SOT429；650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

1. General description The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

文件：315.84 Kbytes 页数：12 Pages

NEXPERIA

安世