丝印：GAN063-650WSA；Package：SOT429；650 V, 50 mΩ Gallium Nitride (GaN) FET

1. General description The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefit

文件：287.03 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：GAN063-650WSA；Package：SOT429；650 V, 50 mΩ Gallium Nitride (GaN) FET

1. General description The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefit

文件：287.03 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司