GAN063-650WSA中文资料安世数据手册PDF规格书

1. General description

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that

combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET

technologies — offering superior reliability and performance.

2. Features and benefits

• Ultra-low reverse recovery charge

• Simple gate drive (0 V to +10 V or 12 V)

• Robust gate oxide (±20 V capability)

• High gate threshold voltage (+4 V) for very good gate bounce immunity

• Very low source-drain voltage in reverse conduction mode

• Transient over-voltage capability (800 V)

3. Applications

• Hard and soft switching converters for industrial and datacom power

• Bridgeless totempole PFC

• PV and UPS inverters

• Servo motor drives