型号：AP2128K-1.8TRG1；Package：SOT-23-5；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features · Wide Operating Voltage: 2.5V to 6V · Low Dropout Voltage:170mV@300mA for VOUT=3.3V, 140mV@300mA for VOUT=5.2V · High Output Voltage Accuracy: ±2 · High Ripple Rejection: 68dB@ f=1kHz, 54dB@ f=10kHz · Low Standby Current: 0.1μA · Low Quiescent Current: 60μA Typical · Low Output

文件：861.57 Kbytes 页数：21 Pages

美台半导体

型号：ISL62873HRUZ-T；Package：16Ld2.6x1.8μTQFN；PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator

文件：919.68 Kbytes 页数：17 Pages

瑞萨

型号：ISL21060CFH633Z-TK；Package：SOT-23；Precision, Low Noise FGA™ Voltage References with Disable

Features • Reference output voltage . . . . . . . . . . . . . . . .2.048V, 2.500V, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.000V, 3.300V, 4.096V • Initial accuracy . . . . . . . . . . . . . . . . . . . . . . . . ±1.0mV, ±2.5mV • Input voltage range - ISL21060-20 . . . .

文件：3.01874 Mbytes 页数：21 Pages

瑞萨

型号：STGAP2GSC；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Features • High voltage rail up to 1200 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN

文件：551.02 Kbytes 页数：20 Pages

意法半导体

型号：STGAP2GSCTR；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Features • High voltage rail up to 1200 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN

文件：551.02 Kbytes 页数：20 Pages

意法半导体

型号：STGAP2GSNC；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features • High voltage rail up to 1700 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN

文件：556.07 Kbytes 页数：20 Pages

意法半导体

型号：STGAP2GSNCTR；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features • High voltage rail up to 1700 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN

文件：556.07 Kbytes 页数：20 Pages

意法半导体

型号：STGAP2HDM；Package：SO-36W；Galvanically isolated 4 A dual gate driver

Features • High voltage rail up to 1200 V • Driver current capability: 4 A sink/source @ 25 °C • dV/dt transient immunity ±100 V/ns • Overall input-output propagation delay: 75 ns • Separate sink and source option for easy gate driving configuration • 4 A Miller CLAMP • UVLO function • Con

文件：803.17 Kbytes 页数：24 Pages

意法半导体

型号：STGAP2HDMTR；Package：SO-36W；Galvanically isolated 4 A dual gate driver

Features • High voltage rail up to 1200 V • Driver current capability: 4 A sink/source @ 25 °C • dV/dt transient immunity ±100 V/ns • Overall input-output propagation delay: 75 ns • Separate sink and source option for easy gate driving configuration • 4 A Miller CLAMP • UVLO function • Con

文件：803.17 Kbytes 页数：24 Pages

意法半导体

型号：GAP161504-ATC2；Dual Wavelength SMD Type Emitter

Features  Top view 1615 package  Viewing Angle = 65  Compatible with infrared and vapor phase reflow solder process  High reliability  Dual dominant wavelength (G=520nm , A=605nm)  RoHS compliance Applications  Optical indicator.  Switch and Symbol Display. Description The

文件：1.15654 Mbytes 页数：10 Pages

CTMICRO

CT Micro International Corporation