AP2128K-1.8TRG1

Marking：GAP；Package：SOT-23-5；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features ·WideOperatingVoltage:2.5Vto6V ·LowDropoutVoltage:170mV@300mAfor VOUT=3.3V,140mV@300mAforVOUT=5.2V ·HighOutputVoltageAccuracy:±2 ·HighRippleRejection: 68dB@f=1kHz,54dB@f=10kHz ·LowStandbyCurrent:0.1μA ·LowQuiescentCurrent:60μATypical ·LowOutput

ISL62873HRUZ-T

Marking：GAP；Package：16Ld2.6x1.8μTQFN；PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator

ISL21060CFH633Z-TK

Marking：GAPA；Package：SOT-23；Precision, Low Noise FGA™ Voltage References with Disable

Features •Referenceoutputvoltage................2.048V,2.500V, ...............................3.000V,3.300V,4.096V •Initialaccuracy........................±1.0mV,±2.5mV •Inputvoltagerange -ISL21060-20....

STGAP2GSC

Marking：GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Features •Highvoltagerailupto1200V •Drivercurrentcapability:2A/3Asource/sink@25°C,VH=6V •dV/dttransientimmunity±100V/ns •Input-outputpropagationdelay:45ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •UVLOfunctionoptimizedforGaN

STGAP2GSCTR

Marking：GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Features •Highvoltagerailupto1200V •Drivercurrentcapability:2A/3Asource/sink@25°C,VH=6V •dV/dttransientimmunity±100V/ns •Input-outputpropagationdelay:45ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •UVLOfunctionoptimizedforGaN

STGAP2GSNC

Marking：GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features •Highvoltagerailupto1700V •Drivercurrentcapability:2A/3Asource/sink@25°C,VH=6V •dV/dttransientimmunity±100V/ns •Input-outputpropagationdelay:45ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •UVLOfunctionoptimizedforGaN

STGAP2GSNCTR

Marking：GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features •Highvoltagerailupto1700V •Drivercurrentcapability:2A/3Asource/sink@25°C,VH=6V •dV/dttransientimmunity±100V/ns •Input-outputpropagationdelay:45ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •UVLOfunctionoptimizedforGaN

STGAP2HDM

Marking：GAP2HDM；Package：SO-36W；Galvanically isolated 4 A dual gate driver

Features •Highvoltagerailupto1200V •Drivercurrentcapability:4Asink/source@25°C •dV/dttransientimmunity±100V/ns •Overallinput-outputpropagationdelay:75ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •4AMillerCLAMP •UVLOfunction •Con

STGAP2HDMTR

Marking：GAP2HDM；Package：SO-36W；Galvanically isolated 4 A dual gate driver

Features •Highvoltagerailupto1200V •Drivercurrentcapability:4Asink/source@25°C •dV/dttransientimmunity±100V/ns •Overallinput-outputpropagationdelay:75ns •Separatesinkandsourceoptionforeasygatedrivingconfiguration •4AMillerCLAMP •UVLOfunction •Con