丝印：G28N；Package：SOT89；LOW DROPOUT LINEAR REGULATOR

文件：839.11 Kbytes 页数：23 Pages

DIODES

美台半导体

丝印：G28N02；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G28N02T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：795.24 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G28N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G28N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：713.01 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G28N02；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G28N02T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：795.24 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G28N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G28N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：713.01 Kbytes 页数：6 Pages

GOFORD

谷峰半导体