丝印：G29；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G29 uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：490.63 Kbytes 页数：6 Pages

GOFORD

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丝印：G29；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G29 uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：490.63 Kbytes 页数：6 Pages

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