丝印：G29；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G29 uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：490.63 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2955；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2955；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2955；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2955；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2955；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2955；Package：TSSOP(DA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2955；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2955；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2955；Package：VQFN(RHA)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：1.80339 Mbytes 页数：75 Pages

TI

德州仪器