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G2K3N10G	文件：961.46 Kbytes Page：6 Pages	Marking：G2K3N10；Package：SOT-89；N-Channel Enhancement Mode Power MOSFET Description TheG2K3N10Gusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
G2K3N10H	文件：982.02 Kbytes Page：6 Pages	Marking：G2K3N10；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET Description TheG2K3N10Husesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
G2K3N10HA	文件：1.22021 Mbytes Page：6 Pages	Marking：G2K3N10；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET Description TheG2K3N10HAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
G2K3N10L6	文件：924.54 Kbytes Page：6 Pages	Marking：G2K3N10；Package：SOT-23-6-Dual；Dual N-Channel Enhancement Mode Power MOSFET Description TheG2K3N10L6usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD

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