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G2K3N10G

丝印:G2K3N10;Package:SOT-89;N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:961.46 Kbytes 页数:6 Pages

GOFORD

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G2K3N10H

丝印:G2K3N10;Package:SOT-223;N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:982.02 Kbytes 页数:6 Pages

GOFORD

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G2K3N10HA

丝印:G2K3N10;Package:SOT-223;N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.22021 Mbytes 页数:6 Pages

GOFORD

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G2K3N10L6

丝印:G2K3N10;Package:SOT-23-6-Dual;Dual N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10L6 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:924.54 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G2K3N10G

丝印:G2K3N10;Package:SOT-89;N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:961.46 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G2K3N10H

丝印:G2K3N10;Package:SOT-223;N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:982.02 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G2K3N10HA

丝印:G2K3N10;Package:SOT-223;N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.22021 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

G2K3N10L6

丝印:G2K3N10;Package:SOT-23-6-Dual;Dual N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10L6 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:924.54 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

供应商型号品牌批号封装库存备注价格
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
询价
NK/南科功率
2025+
SOT-223
986966
国产
询价
Goford Semiconductor
25+
SOT-23-6
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
谷峰
两年内
NA
1067
实单价格可谈
询价
YANGJIE
24+
SMAF
50000
原厂直销全新原装正品现货 欢迎选购
询价
OMRON/欧姆龙
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
OMRON
24+/25+
19
原装正品现货库存价优
询价
OMRON/欧姆龙
2508+
/
233927
一级代理,原装现货
询价
OMRON
1736+
RELAY
8529
专营继电器只做原装正品假一赔十!
询价
OMRON
23+
NA
256
专做原装正品,假一罚百!
询价
更多G2K3N10供应商 更新时间2025-8-12 11:06:00