丝印：G2K8P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G2K8P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：606.06 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K8P15；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G2K8P15S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06869 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K8P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G2K8P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：606.06 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K8P15；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G2K8P15S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06869 Mbytes 页数：6 Pages

GOFORD

谷峰半导体