丝印：G20N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G20N03K uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：514.49 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G20N06；Package：DFN5/6-8LDual；N-Channel Enhancement Mode Power MOSFET

Description The G20N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：987.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G20P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a widevariety of applications. Application l Power switch l DC/DC converters

文件：799.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G20P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G20P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a widevariety of applications. Application l Power switch l DC/DC converters

文件：584.45 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G20P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G20P10KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：654.23 Kbytes 页数：6 Pages

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谷峰半导体

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

丝印：2002A；Package：SOT-23-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：895.17 Kbytes 页数：6 Pages

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Multipurpose Boxes with Lids

Features: • The LID and base incorporate a tongue and groove sealing system with a neoprene gasket • Wall mounting holes and LID fixing screws are outside the sealing area thus preventing the ingress of moisture and dust • Designed to IP 65 of IEC 529 and nema 4 (dust and hoseproof) • Internal

文件：304.43 Kbytes 页数：3 Pages

MULTICOMP

易络盟

丝印：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：785.48 Kbytes 页数：6 Pages

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丝印：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description The G2014A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application ⚫ Power switch ⚫ DC/DC converters

文件：845.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体