丝印：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：937.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2012A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application ⚫ Power switch ⚫ DC/DC converters

文件：1.00604 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：785.48 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description The G2014A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application ⚫ Power switch ⚫ DC/DC converters

文件：845.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Multipurpose Boxes with Lids

Features: • The LID and base incorporate a tongue and groove sealing system with a neoprene gasket • Wall mounting holes and LID fixing screws are outside the sealing area thus preventing the ingress of moisture and dust • Designed to IP 65 of IEC 529 and nema 4 (dust and hoseproof) • Internal

文件：304.43 Kbytes 页数：3 Pages

MULTICOMP

易络盟

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

文件：716.83 Kbytes 页数：10 Pages

XPPOWER

High speed switching series third generation

High speed IGBT in Trench and Fieldstop technology Features: TRENCHSTOPTM technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating,halogen-free mould compound,RoH

文件：2.11172 Mbytes 页数：14 Pages

INFINEON

英飞凌

G-Series Power Single-Ended Cordset: Male, angled, 3-pin (2PE), grey body, 230 V AC/DC, 10 A; PVC grey cable, 0.75 mm²

Product Description G-Series Power Single-Ended Cordset: Male, angled, 3-pin (2+PE), grey body, 230 V AC/DC, 10 A; PVC grey cable, 0.75 mm²

文件：414.43 Kbytes 页数：2 Pages

BELDEN

百通

丝印：G20N03；Package：DFN2X2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G20N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：727.85 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G20N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G20N03K uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：514.49 Kbytes 页数：6 Pages

GOFORD

谷峰半导体