丝印：G2003A；Package：SOT-23-3L；Power switching application

Description The G2003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switching application

文件：1.56528 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2009G；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G2009G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：643.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G200N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：831.95 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G200N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：920.07 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G200P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：631.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G200P04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：871.86 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200P04S2；Package：SOP-8DUAL；Dual P-Channel Enhancement Mode Power MOSFET

Description The G200P04S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：884.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：937.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2012A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application ⚫ Power switch ⚫ DC/DC converters

文件：1.00604 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G20N03；Package：DFN2X2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G20N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：727.85 Kbytes 页数：6 Pages

GOFORD

谷峰半导体