Multipurpose Boxes with Lids

Features: • The LID and base incorporate a tongue and groove sealing system with a neoprene gasket • Wall mounting holes and LID fixing screws are outside the sealing area thus preventing the ingress of moisture and dust • Designed to IP 65 of IEC 529 and nema 4 (dust and hoseproof) • Internal

文件：304.43 Kbytes 页数：3 Pages

MULTICOMP

易络盟

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter

文件：716.83 Kbytes 页数：10 Pages

XPPOWER

High speed switching series third generation

High speed IGBT in Trench and Fieldstop technology Features: TRENCHSTOPTM technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating,halogen-free mould compound,RoH

文件：2.11172 Mbytes 页数：14 Pages

Infineon

英飞凌

G-Series Power Single-Ended Cordset: Male, angled, 3-pin (2PE), grey body, 230 V AC/DC, 10 A; PVC grey cable, 0.75 mm²

Product Description G-Series Power Single-Ended Cordset: Male, angled, 3-pin (2+PE), grey body, 230 V AC/DC, 10 A; PVC grey cable, 0.75 mm²

文件：414.43 Kbytes 页数：2 Pages

BELDEN

百通

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

文件：93.09 Kbytes 页数：7 Pages

Intersil

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

文件：121.05 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction los

文件：97.79 Kbytes 页数：8 Pages

Intersil

63A, 1200V, NPT Series N-Channel IGBT

63A, 1200V, NPT Series N-Channel IGBT The HGTG20N120CN is aNon-PunchThrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET a

文件：83.76 Kbytes 页数：7 Pages

Intersil

34A, 1200V N-Channel IGBT

Description The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop vari

文件：167.55 Kbytes 页数：5 Pages

Intersil

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

文件：179.52 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司