G20N60B3D中文资料仙童半导体数据手册PDF规格书
G20N60B3D规格书详情
The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. The diode used in anti-parallel with the IGBT is the RHRP3060.
Features
• 40A, 600V at TC = 25℃
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150℃
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Freescale(飞思卡尔) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
FAIRCHILD/仙童 |
25+ |
TO247 |
5186 |
原装正品,假一罚十! |
询价 | ||
FSC |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
2017+ |
TO3P |
6528 |
只做原装正品假一赔十! |
询价 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
H |
24+ |
TO247 |
3000 |
询价 | |||
哈理斯 |
24+ |
TO-3P |
3600 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
哈里斯 |
23+ |
TO-247 |
3000 |
全新原装 |
询价 | ||
INTERSILSIL |
2023+ |
TO-3P |
5800 |
进口原装,现货热卖 |
询价 | ||
2023+ |
5000 |
进口原装现货 |
询价 |
