G20N60B3中文资料仙童半导体数据手册PDF规格书
G20N60B3规格书详情
The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. The diode used in anti-parallel with the IGBT is the RHRP3060.
特性 Features
• 40A, 600V at TC = 25℃
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150℃
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
产品属性
- 型号：
G20N60B3
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Freescale(飞思卡尔) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
FSC |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
TO247 |
5186 |
原装正品,假一罚十! |
询价 | ||
HAR |
23+ |
65480 |
询价 | ||||
FSC |
NEW |
TO3P |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
JINGDAO/晶导微 |
23+ |
SOD-123FL |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
H |
24+ |
TO247 |
3000 |
询价 | |||
HARRIS哈里斯 |
25+ |
管3P |
18000 |
原厂直接发货进口原装 |
询价 | ||
哈理斯 |
24+ |
TO-3P |
3600 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
HAR |
05+ |
原厂原装 |
4332 |
只做全新原装真实现货供应 |
询价 |
