丝印：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G200P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：631.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G200P04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：871.86 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200P04S2；Package：SOP-8DUAL；Dual P-Channel Enhancement Mode Power MOSFET

Description The G200P04S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：884.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G200P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：631.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G200P04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：871.86 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G200P04S2；Package：SOP-8DUAL；Dual P-Channel Enhancement Mode Power MOSFET

Description The G200P04S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：884.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体