丝印：G2100；Package：VQFN-FCRLF；LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u

文件：1.37641 Mbytes 页数：28 Pages

TI

德州仪器

Multipurpose Enclosure

Enclosure Type : Multipurpose Enclosure Material : ABS Body Colour : Grey

文件：198.64 Kbytes 页数：1 Pages

MULTICOMP

易络盟

RF POWER GAN TRANSISTOR

文件：44.32 Kbytes 页数：2 Pages

POLYFET