丝印：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：937.57 Kbytes 页数：6 Pages

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谷峰半导体

丝印：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2012A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application ⚫ Power switch ⚫ DC/DC converters

文件：1.00604 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：937.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET

Description The G2012A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application ⚫ Power switch ⚫ DC/DC converters

文件：1.00604 Mbytes 页数：6 Pages

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