G2014

Marking：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description TheG2014usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫Powerswitch ⚫DC/DCconverters

G2014

Rubber Push-In Bumpers

G2014A

Marking：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description TheG2014Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ⚫Powerswitch ⚫DC/DCconverters

GAPM2014N

MinisizeofDiscretesemiconductorelements

GG2014

SPECIFICATIONSFORLCDMODULE

GN2014A

XFPTxSignalConditionerwithVCSELDriver

GRF2014

BroadbandLinearGainBlock0.05to3.8GHz

Features Reference:5.0V/150mA/900MHz •Gain:15.9dB •OIP3:43.5dBm; •OP1dB:24.0dBm Reference:8.0V/150mA/900MHz •Gain:15.9dB •OIP3:41.0dBm; •OP1dB:27.5dBm •FlexibleBiasVoltageandCurrent •InternallyMatchedto50Ω •Process:GaAspHEMT Applications •LinearD

GSMBT2014

PNPEPITAXIALPLANARTRANSISTOR

GSMBT2014

PNPEPITAXIALPLANARTRANSISTOR

GTL2014

4-bitLVTTLtoGTLtransceiver

Generaldescription TheGTL2014isa4-bittranslatingtransceiverdesignedfor3.3VLVTTLsysteminterfacewithaGTL−/GTL/GTL+bus. ThedirectionpinallowstheparttofunctionaseitheraGTLtoLVTTLsamplingreceiverorasaLVTTLtoGTLinterface. TheGTL2014LVTTLinputs(only)aretol