STGP20M65DF2

Marking：G20M65DF2；Package：TO-220；Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

Features •Highshort-circuitwithstandtime •VCE(sat)=1.55V(typ.)@IC=20A •Tightparametersdistribution •Saferparalleling •Lowthermalresistance •Softandveryfastrecoveryantiparalleldiode Applications •Motorcontrol •UPS •PFC •General-purposeinverters Des

STGW20IH125DF

Marking：G20IH125DF；Package：TO-247；1250 V, 20 A IH series trench gate field-stop IGBT

Description TheseIGBTsaredevelopedusinganadvanced proprietarytrenchgatefield-stopstructureand performanceisoptimizedinbothconductionand switchinglosses.Afreewheelingdiodewithalow dropforwardvoltageisco-packaged.Theresultis aproductspecificallydesignedtomax

STGW25H120DF2

Marking：G25H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThesedevicesarepartoftheHseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofhighswitchingfrequencyconve

STGW25M120DF3

Marking：G25M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThedeviceispartoftheMseriesofIGBTs,whichrepresentanoptimumcompromiseinperformancetomaximizetheefficiencyofinvertersystemswherelow-lossandshortcircuitcapability

STGW25S120DF3

Marking：G25S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 25 A low drop

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheSseriesof 1200VIGBTswhichistailoredtomaximize efficiencyoflowfrequencyindustrialsystems. Furthermore,apositiveVCE(sat)temperature coeffici

STGW28IH125DF

Marking：G28IH125DF；Package：TO-247；1250 V, 30 A IH series trench gate field-stop IGBT

Description TheseIGBTsaredevelopedusinganadvanced proprietarytrenchgatefield-stopstructureand performanceisoptimizedinbothconductionand switchinglosses.Afreewheelingdiodewithalow dropforwardvoltageisco-packaged.Theresultis aproductspecificallydesignedtomax

STGWA20HP65FB2

Marking：G20HP65FB2；Package：TO-247；Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package

Features •Maximumjunctiontemperature:TJ=175°C •LowVCE(sat)=1.65V(typ.)@IC=20A •Co-packagedprotectiondiode •Minimizedtailcurrent •Tightparameterdistribution •Lowthermalresistance •PositiveVCE(sat)temperaturecoefficient Applications •Welding •Powerfa

STGWA25H120DF2

Marking：G25H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThesedevicesarepartoftheHseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofhighswitchingfrequencyconve

STGWA25M120DF3

Marking：G25M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefield-stopstructure.ThedeviceispartoftheMseriesofIGBTs,whichrepresentanoptimumcompromiseinperformancetomaximizetheefficiencyofinvertersystemswherelow-lossandshortcircuitcapability

STGWA25S120DF3

Marking：G25S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 25 A low drop

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheSseriesof 1200VIGBTswhichistailoredtomaximize efficiencyoflowfrequencyindustrialsystems. Furthermore,apositiveVCE(sat)temperature coeffici