IGW25T120

Marking：G25T120；Package：PG-TO-247-3；Low Loss IGBT in TrenchStop짰 and Fieldstop technology

LowLossIGBTinTrenchStop®andFieldstoptechnology •Shortcircuitwithstandtime–10µs •Designedfor: -FrequencyConverters -UninterruptedPowerSupply •TrenchStop® andFieldstoptechnologyfor1200Vapplications offers: -verytightparameterdistribution -highruggedne

LMG2100R044RARR

Marking：G2100；Package：VQFN-FCRLF；LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1Features •Integrated4.4mΩhalf-bridgeGaNFETsanddriver •90Vcontinuous,100Vpulsedvoltagerating •PackageoptimizedforeasyPCBlayout •Highslewrateswitchingwithlowringing •5Vexternalbiaspowersupply •Supports3.3Vand5Vinputlogiclevels •Gatedrivercapableofu

PEC3836C2C-AU_R1_000A1

Marking：G2C；Package：SOT-323；ESD Protection

Features ISO10605(C=330pF,R=330Ω): -±30kVAir,±30kVContactfor8V~24V -±25kVAir,±20kVContactfor36V HBM≧±8KV&CDM≧±2KV ISO7637-3(Note3): -Pulse3a:VS=-150V -Pulse3b:VS=+100V IEC61000-4-5(Lightning):8~1.5A(8/20uS) AEC-Q101qualified Leadfreeincom

PESDSOT24C

Marking：G24；Package：SOT-23；Plastic-Encapsulate Diodes

DESCRIPTION LowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protection diodeinasmallSOT-23Surface-MountedDevice(SMD)plasticpackagedesignedto protecttwodatalinesfromthedamagecausedbyESDandothertransients. FEATURES Bi-directionalESDprotectionoft

PESDSOT24C-CAR

Marking：G24；Package：SOT-23；Plastic-Encapsulate Diodes

DESCRIPTION LowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeinasmall SOT-23Surface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwodatalinesfrom thedamagecausedbyESDandothertransients. FEATURES Bi-directionalESDprotectionoft

RQ3G270BJFRA

Marking：G270BJ；Package：HSMT8AG；Pch -40V -27A Power MOSFET

Features 1)Smallhigh-poweredpackage 2)Realizationofhighmountingreliability byoriginalterminalandplatingtreatment 3)AEC-Q101Qualified Application ADAS/Info./Lighting/Body

RT9166-12GVL

Marking：G2=***；Package：SOT-23；300/600mA, Ultra-Fast Transient Response LDO Regulator

GeneralDescription TheRT9166/AseriesareCMOSlowdropoutregulatorsoptimizedforultra-fasttransientresponse.Thedevicesarecapableofsupplying300mAor600mAofoutputcurrentwithadropoutvoltageof230mVor580mVrespectively. Features •LowQuiescentCurrent(Typically220μA) •

RT9166-12PVL

Marking：G2-***；Package：SOT-23；300/600mA, Ultra-Fast Transient Response LDO Regulator

GeneralDescription TheRT9166/AseriesareCMOSlowdropoutregulatorsoptimizedforultra-fasttransientresponse.Thedevicesarecapableofsupplying300mAor600mAofoutputcurrentwithadropoutvoltageof230mVor580mVrespectively. Features •LowQuiescentCurrent(Typically220μA) •

RT9715CGQW

Marking：G2=**；Package：WDFN-83x3；90m廓, 2A/1.5A/1.1A/0.7A High-Side Power Switches with Flag

GeneralDescription TheRT9715isacost-effective,low-voltage,singleN-MOSFEThigh-sidePowerSwitchICforUSBapplication.Lowswitch-onresistance(typ.90mΩ)andlowsupplycurrent(typ.50uA)arerealizedinthisIC. Features ●90mΩ(typ.)N-MOSFETSwitch ●OperatingRange:2.7Vto5.

S1KP1M-7

Marking：G21；Package：PowerDI123；1.0A SURFACE MOUNT STANDARD RECOVERY RECTIFIER PowerDI123

Features -Ideallysuitedforautomatedassembly -Exposedheatsinkondeviceundersideprovidesexcellentthermalperformance -GlassPassivatedDieConstruction -Lead-FreeFinish;RoHSCompliant(Notes1&2) -HalogenandAntimonyFree.“Green”Device(Note3) -Forautomotiveapplicatio