UPG2054K-E3

Marking：G2054；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES •Highisolation:ISL=40dBTYP.@f=0.95to2.15GHz,VCONT=+5.0V/0V •Controlvoltage:VCONT(H)=+3.0to+5.5V(+5.0VTYP.) :VCONT(L)=−0.5to+0.5V(0VTYP.) •Lowinsertionloss:LINS=6.0dBTYP.@f=0.95to2.15GHz,VCONT=+5.0V/0V,ZO=50Ω •20-pin

UPG2054K-E3-A

Marking：G2054；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES •Highisolation:ISL=40dBTYP.@f=0.95to2.15GHz,VCONT=+5.0V/0V •Controlvoltage:VCONT(H)=+3.0to+5.5V(+5.0VTYP.) :VCONT(L)=−0.5to+0.5V(0VTYP.) •Lowinsertionloss:LINS=6.0dBTYP.@f=0.95to2.15GHz,VCONT=+5.0V/0V,ZO=50Ω •20-pin

UPG2121TB-E3

Marking：G2E；GaAs INTEGRATED CIRCUIT

FEATURES •+2.8Vsinglevoltage •Lowdistortion(IIP3=+23dBmTYP.) •Lowcurrentoperation(IDD=3.5mATYP.) •LObufferamplifierandpassivemixeronasinglechip •6-pinsuperminimoldpackage(Size:2.0´1.25´0.9mm)

UPG2128TB-E3

Marking：G2M；GaAs INTEGRATED CIRCUIT

FEATURES •Operationfrequency:fopt=1429to1453MHz(1441MHzTYP.) •Supplyvoltage:VDD1=2.7to3.3V(3.0VTYP.) :VDD2=2.7to4.2V(3.5VTYP.) •Circuitcurrent:IDD=40mATYP.@VDD1=3.0V,VDD2=3.5V,VAGC=2.5V,Pout=+12dBm •Highpowergain:GP=28dBTYP

UPG2130TB-E3

Marking：G2P；GaAs INTEGRATED CIRCUIT

FEATURES •Operationfrequency:fopt=1429to1453MHz(1441MHzTYP.) •Supplyvoltage:VDD1=2.7to3.3V(3.0VTYP.) :VDD2=3.0to4.2V(3.5VTYP.) •Circuitcurrent:IDD=25mATYP.@VDD1=3.0V,VDD2=3.2V,VAGC=2.5V,Pout=+10dBm •Highpowergain:GP=30dBTYP

UPG2181T5R-E2

Marking：G2181；Package：RQFN；GaAs INTEGRATED CIRCUIT

FEATURES •Supplyvoltage:VDD=2.8to3.2V(3.0VTYP.) •Controlvoltage:Vcont(H)=1.5toVDD(VDDTYP.) :Vcont(L)=0to0.2V(0VTYP.) •Lowinsertionloss:Lins1=0.8dBTYP.@f=2.3to2.7GHz,VDD=3.0V,Vcont(H)=3.0V,Vcont(L)=0V :Lins2=1.0dBTYP.@f=3.

UPG2181T5R-E2-A

Marking：G2181；Package：RQFN；GaAs INTEGRATED CIRCUIT

FEATURES •Supplyvoltage:VDD=2.8to3.2V(3.0VTYP.) •Controlvoltage:Vcont(H)=1.5toVDD(VDDTYP.) :Vcont(L)=0to0.2V(0VTYP.) •Lowinsertionloss:Lins1=0.8dBTYP.@f=2.3to2.7GHz,VDD=3.0V,Vcont(H)=3.0V,Vcont(L)=0V :Lins2=1.0dBTYP.@f=3.

UPG2193T6E-E2

Marking：G2193；Package：TQFN；GaAs INTEGRATED CIRCUIT

FEATURES •SupplyVoltage:VDD=2.5to3.0V（2.775VTYP.） •SerialPeripheralInterfaceSPISupplyVoltage :AUXSPI_VDD(H)=1.5to3.0V（1.8VTYP.） :AUXSPI_VDD(L)=−0.3to0.3V（0VTYP.） •LowInsertionLoss:Lins=0.4dBTYP.@GSM_LB_TX :Lins=0.6dBTYP.@GSM_HB_TX •Harm

UPG2193T6E-E2-A

Marking：G2193；Package：TQFN；GaAs INTEGRATED CIRCUIT

FEATURES •SupplyVoltage:VDD=2.5to3.0V（2.775VTYP.） •SerialPeripheralInterfaceSPISupplyVoltage :AUXSPI_VDD(H)=1.5to3.0V（1.8VTYP.） :AUXSPI_VDD(L)=−0.3to0.3V（0VTYP.） •LowInsertionLoss:Lins=0.4dBTYP.@GSM_LB_TX :Lins=0.6dBTYP.@GSM_HB_TX •Harm

XC7SET125GV

Marking：g25；Package：SOT753；Bus buffer/line driver; 3-state

1.Generaldescription XC7SET125isahigh-speedSi-gateCMOSdevices.Itprovidesonenon-invertingbuffer/linedriver with3-stateoutput.The3-stateoutputiscontrolledbytheoutputenableinput(OE).AHIGHatOE causestheoutputtoassumeahigh-impedanceOFF-state. 2.Featuresandbe