G2KF

Marking：G2KF；Package：SMAF；Surface Mount Tension Resolution G2AF Through G2MF

FEATURES ●Lowprofilepackage ●Idealforautomatedplacement ●Glasspassivatedchipjunction ●Highforwardsurgecapability ●MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

G2MF

Marking：G2MF；Package：SMAF；Surface Mount Tension Resolution G2AF Through G2MF

FEATURES ●Lowprofilepackage ●Idealforautomatedplacement ●Glasspassivatedchipjunction ●Highforwardsurgecapability ●MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

G2N65K

Marking：G2N65；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lPowerswitch lDC/DCconverters

HGT1S20N60C3S

Marking：G20N60C3；Package：TO-263AB；45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

HGTG20N60C3

Marking：G20N60C3；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

HGTG20N60C3D

Marking：G20N60C3D；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

HGTG20N60C3D

Marking：G20N60C3D；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

HGTP20N60C3

Marking：G20N60C3；Package：TO-220AB；45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

IGP20N60H3

Marking：G20H603；Package：PG-TO220-3；High speed switching series third generation

HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoH

IGW25N120H3

Marking：G25H1203；Package：PG-TO247-3；IGW25N120H3

Features: TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpic