丝印：G02；Package：SOT23-5；High-Side Power Switches with Flag

Features » Wide Supply Voltage Range: 2.5 to 5.5V « Compliant to USB Specifications » Current-Limit and Short-Circuit Protections. « Enable Active Low/High » Typical Rdson 70mQ (SOT-23-5) » Thermal Shutdown Protection « Current Limiting Protection » Hot Plug-In Application(Soft

文件：4.77064 Mbytes 页数：8 Pages

TECHPUBLIC

台舟电子

丝印：g02；Package：SOT753；2-input NOR gate

1. General description XC7SET02 is a high-speed Si-gate CMOS device. It provides a 2-input NOR function. 2. Features and benefits • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • TTL input levels • ESD protection: • HBM JESD22-A1

文件：198.21 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：G020N03；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：731.77 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G020N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G020N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.18 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G020N03；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01221 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G02P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：850.72 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G02P06；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G02P06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.0548 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G022N03；Package：TO-252-2L；N-Channel Enhancement Mode MOSFET

文件：1.033079 Mbytes 页数：11 Pages

HUAYI

华羿微电

丝印：G022N03；Package：TO-251-3L；N-Channel Enhancement Mode MOSFET

文件：1.033079 Mbytes 页数：11 Pages

HUAYI

华羿微电

丝印：G022N03；Package：TO-251-3S；N-Channel Enhancement Mode MOSFET

文件：1.033079 Mbytes 页数：11 Pages

HUAYI

华羿微电