N-Channel Power MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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Fairchild

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600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：581.25 Kbytes 页数：8 Pages

Fairchild

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=7.7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：369.61 Kbytes 页数：2 Pages

ISC

无锡固电

650V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

文件：722.05 Kbytes 页数：8 Pages

Fairchild

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.9Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：369.71 Kbytes 页数：2 Pages

ISC

无锡固电

800V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：780.44 Kbytes 页数：8 Pages

Fairchild

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800V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：610.86 Kbytes 页数：8 Pages

Fairchild

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900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：674.07 Kbytes 页数：8 Pages

Fairchild

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900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：678.29 Kbytes 页数：8 Pages

Fairchild

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60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：645.34 Kbytes 页数：8 Pages

Fairchild

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