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FQA35N40

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=35A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.105Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件:362.12 Kbytes 页数:2 Pages

ISC

无锡固电

FQA36P15

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-36A@ TC=25℃ ·Drain Source Voltage- : VDSS=-150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.09Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件:363.98 Kbytes 页数:2 Pages

ISC

无锡固电

FQA36P15_V01

P-Channel QFET® MOSFET -150 V, -36 A, 90 mΩ

Features -36 A, -150 V, RDS(on) = 90 mΩ (Max) @VGS = -10 V, ID = -18 A Low Gate Charge (Typ. 81 nC) Low Crss (Typ. 110 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto

文件:2.38431 Mbytes 页数:10 Pages

Fairchild

仙童半导体

FQA38N30

300V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

文件:742.1 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQA38N30

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=38.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件:363.43 Kbytes 页数:2 Pages

ISC

无锡固电

FQA44N08

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:662.32 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQA44N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=49.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) =34mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件:363.57 Kbytes 页数:2 Pages

ISC

无锡固电

FQA44N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=48A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =39mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件:362.89 Kbytes 页数:2 Pages

ISC

无锡固电

FQA44N30

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=43.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =69mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件:363 Kbytes 页数:2 Pages

ISC

无锡固电

FQA44N30

300V N-Channel MOSFET

300V N-Channel MOSFET

文件:745.14 Kbytes 页数:8 Pages

Fairchild

仙童半导体

技术参数

  • 额定电压 [DC]:

    40V

  • 耐电压:

    DC2250V

  • 直流电阻 (Max.):

    7.5mΩ

  • 共模衰减量 (Min.):

    50dB

  • 差模衰减量 (Min.):

    50dB

供应商型号品牌批号封装库存备注价格
FSC
24+/25+
1380
原装正品现货库存价优
询价
DISCRETE
30
FSC
750
询价
仙童/华晶
2015+
TO3P
19898
专业代理原装现货,特价热卖!
询价
FAIRCHILD
24+
TO-247TO-3PTO-3PF
8866
询价
FAI
23+
TO-3P
5500
现货,全新原装
询价
FAIRCHILD
N/A
主营模块
190
原装正品,现货供应
询价
Fairchild
24+
TO-3P
5645
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
FSC进口原
17+
TO-247
6200
询价
FSC
16+
TO-220
10000
全新原装现货
询价
FSC
1706+
TO-3P
5600
只做原装进口,假一罚十
询价
更多FQA供应商 更新时间2025-12-13 14:30:00